three-dimensional “fin”-field-effect transistors (finfets) (Multigate Medical Products Pty Ltd)
90
Structured Review
Multigate Medical Products Pty Ltd
three-dimensional “fin”-field-effect transistors (finfets)
Three Dimensional “Fin” Field Effect Transistors (Finfets), supplied by Multigate Medical Products Pty Ltd, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/three-dimensional+%E2%80%9Cfin%E2%80%9D-field-effect+transistors+(finfets)/three+dimensional+%E2%80%9Cfin++field+effect+transistors++finfets+/10__1063_slash_1__4845515-22-19-26
Average 90 stars, based on 1 article reviews
Three Dimensional “Fin” Field Effect Transistors (Finfets), supplied by Multigate Medical Products Pty Ltd, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/three-dimensional+%E2%80%9Cfin%E2%80%9D-field-effect+transistors+(finfets)/three+dimensional+%E2%80%9Cfin++field+effect+transistors++finfets+/10__1063_slash_1__4845515-22-19-26
Average 90 stars, based on 1 article reviews
three-dimensional “fin”-field-effect transistors (finfets) - by Bioz Stars,
2026-09
90/100 stars
Images
Related Articles
other:Article Title: Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation Article Snippet: Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation Reto Rhyner and Mathieu Luisier Citation: Journal of Applied Physics 114, 223708 (2013); doi: 10.1063/1.4845515 View online: http://dx.doi.org/10.1063/1.4845515 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/114/22?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires J. Appl.. Phys.. 116, 235701 (2014); 10.1063/1.4904844 Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor J. Appl. |